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Ryabtsev V.G, Feklistov A.S., Evseev K.V. Improved Reliability Memory’s Module Structure for Critical Application Systems

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Ryabtsev V.G, Feklistov A.S., Evseev K.V. Improved Reliability Memory’s Module Structure for Critical Application Systems
Int. Journal of Engineering Research and Applications, Vol. 6, Issue 1, (Part - 6) January 2016, p. 65-68.
For critical application systems, which control nuclear power plants and other energy facilities, air, sea and ground vehicles, the needs to ensure their operability are increased. To fulfill this requirement, it is necessary to increase the technical readiness coefficient, the value of which increases with decreasing recovery time control system in case of fault of its constituent units. The main control system components critical applications are memory devices, which store programs and used for performing algorithms control. Semiconductor memory modules with automatic recovery functionality at multiple faults can be used in systems of critical applications protection and management where the use of fault-tolerant digital devices is a necessity due to the inability of traditional methods of repair by replacing the failed elements.
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