Strong A.W. et al. Reliability Wearout Mechanisms in Advanced CMOS Technologies

Wiley / IEEE Press, 2009. — 640 p. — (IEEE Press Series on Microelectronic Systems). — ISBN: 978-0471-73172-6.
Alvin W. Strong, Ernest Y. Wu, Rolf‐Peter Vollertsen, Jordi Suñé, Giuseppe La Rosa, Stewart E. Rauch III. Timothy D. Sullivan.This invaluable resource tells the complete story of failure mechanisms – from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
The purpose of this book is to present in one place the physics, stress and analysis techniques, and models necessary to correctly determine the time of wearout for the major reliability mechanisms associated with CMOS technology. Given these tools and the product application and specifications, the engineer will be able to accurately predict when wearout will start to occur for any given product application. The engineer will also be able to verify that there are no surprises lurking to cause an early failure. Most previous books covering CMOS reliability have focused on only one or two of the technology mechanisms, have generally been more product application specific, and have not delved as deeply into the physics of the mechanisms as we have done here.
Reliability Wearout Mechanisms in Advanced CMOS Technologies has been written at a beginning graduate, or senior undergraduate, level and assumes some solid state physics background. It is designed to teach the physics of the major CMOS reliability mechanisms, the impact those mechanisms have on the device and circuits, and how to calculate that impact. The book assumes that the engineer has little or no reliability education or experience. The engineer that masters this book should have a good understanding of CMOS reliability physics, be able to design and conduct appropriate reliability experiments, analyze data, and accurately make the resultant reliability projections.