Kompa Gunter. Parameter Extraction and Complex Nonlinear Transistor Models

Artech House, 2020. — 574 p. — ISBN13: 978-1-63081-744-2.This book addresses the modeling of microwave field effect transistors (FETs) for circuit design with a focus on accurate measurement-based device characterization and physics based consistent model parameter extraction covering a frequency range up to 120 GHz.Transistor Concepts: MESFET, HEMT, and HBT
Classification of Transistor Models
Classical Shockley Model and Enhanced Modifications
Extrinsic Transistor Network at DC
Estimation of Model Element Values Based on Device Physical Data
Small-Signal Transistor Model Complexity
Reliable Parameter Estimates from Low-Frequency Measurements
Static-/Pulsed-DC Measurements for the Analysis of Thermal and Trapping Effects
Vector Network Analyzer: Operation Principle and Error Models
Uncertainties in the Device Modeling Process
Optimization Methods for Model Parameter Extraction
Extraction Methods: An Overview
All-at-once Model Parameter Extraction
Decomposition-Based Extraction Methods
Bidirectional Search Method
Pure Analytical Model Parameter Extraction
Analytical Model Parameter Extraction Using Rational Functions
Repetitive Random Optimization and and Adaptive Search Space
Bias-Dependence of Source and Drain Resistances
Model Parameter Extraction with Measurement-Correlated Parameter Starting Values
Basics of Nonlinear FET Modeling
Non-Quasi-Static Transistor Model
Large-Signal Measurement Techniques for Device Characterization and Model Verification
Popular Nonlinear FET Models: Capabilities and Limitations
Nonlinear Transistor Model Verification
Appendices:
Generic Two-Port Matrix Transistor Model
Direct Measurement of Series Resistances
Parameter Extraction Relations for Inner FET Branch Topologies
Embedding the Intrinsic Model into an Extrinsic Network
Derivation of Riccati Equation
General N-Port and Two-Port Admitance Matrix