Seo Jung-Hun (Ed.) Wide Bandgap Semiconductor Based Micro/Nano Devices

MDPI, 2019. — 136 p. — ISBN: 978-3-03897-843-5.Printed Edition of the Special Issue Published in Micromachines.
While conventional group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have various definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages.
In this Special Issue, 13 papers published, including various AlGaN/GaN, SiC, and WO3 based devices. More than half of papers reported recent progress on AlGaN/GaN high electron mobility transistors (HEMTs) and light emitting diodes (LEDs).
This book may be of great interest to undergraduates, graduate students, researchers and specialists in the field of Microsystem technology and semiconductor micro and nanoelectronics.