Radamson Henry H., Luo Jun, Simoen Eddy, Zhao Chao. CMOS Past, Present and Future

Woodhead Publishing, 2018. — 280 p.CMOS Past, Present and Future provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform.
The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements. Addresses challenges and opportunities for the use of CMOS. Covers the latest methods of strain engineering, materials integration to increase mobility, nano-scaled transistor processing, and integration of CMOS with photonic components.
Provides a look at the evolution of CMOS technology, including the origins of the technology, current status and future possibilities.Basics of metal–oxide–semiconductor field-effect transistor (MOSFET).
H.H. Radamson.
Introduction.
Basics of MOSFET’s operation.
Figures of merit of MOSFETs.
Evolution of the MOSFET structure.
Scaling and evolution of device architecture.
H.H. Radamson, E. Simeon, J. Luo, G. Wang.
Strain engineering.
High-κ dielectric and metal gate.
C. Zhao, X. Wang, W. Wang.
Channel materials.
H.H. Radamson, E. Simeon.
Challenges in ultra-shallow junction technology.
E. Simoen, H.H. Radamson.
Advanced contact technology.
J. Luo, K.P. Jia.
Advanced interconnect technology and reliability.
Y. Li, C. Zhao.
References. (To each chapter).
Final words.
Acronyms.