Herman M.A., Sitter H. Molecular Beam Epitaxy: Fundamentals and Current Status

Springer Berlin Heidelberg, 1996. — XIV, 453 p. — ISBN: 978-3-642-80060-3.Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-quality semiconductor devices. This monograph discusses the most important aspects of an MBE apparatus, the physics and chemistry of the crystallization of various materials and device structures, and the characterization methods that relate the structural para- meters of the grown (or growing) field or structure to the technologically relevant parameters of the crystallization procedure. In the present second edition two new fields of activity, which emerged in the 1990s have been addressed. These are: (i) crystallization of as-grown low-dimensional heterostructures, mainly quantum wires and quantum dots, and (ii) in-growth control of the MBE crystallization process of strained-layer structures in order to achieve the highly pre- ferred mode of crystallization, the perfect layer-by-layer growth. A substantial part of the "first edition text", which lost its present-day interest has been removed to have sufficiant space for the most current topics in MBE.Background Information.Thin, Film Growth from Beams in a High Vacuum Environment.
Evolution of the MBE Technique.
Modifications of the MBE Technique.
Sources of Atomic and Molecular Beams.
Effusion Process and the Ideal Effusion Cell.
Effusion from Real Effusion Cells.
Effusion Cells Used in Solid Source MBE Systems.
Beam Sources Used in GS MBE Systems.
High-Vacuum Growth and Processing Systems.
Building Blocks of Modular MBE Systems.
Multiple-Growth and Multiple-Process Facilities in MBE Systems.Charactrization Methods.
Characterization Techniques.
RHEED.
Optical Characterization Techniques.
Postgrowth Characterization Methods.MBE Growth Process.
MBE Growth Processes of Lattice-Matched Structures.
General View of the MBE Growth Process.
Growth Mechanisms in Lattice-Matched MBE.
Modulated Beams Growth Techniques.
Doping During MBE Processes.
Growth Processes in Strained-Layer MBE.
Critical Thickness.
Surface Kinetic Effects.
Multilayer Structures as Buffers.
Material-Related Growth Characteristics in MBE.
Si and IV-IV Heterostructures.
GaAs- and As-Containing Compounds.
Narrow-Gap II-VI Compounds Containing Hg.Outlook.
Miscellaneous Material Systems Grown by MBE.
MBE-Related Growth Techniques.
Development Trends of the MBE Technique.
Further Readings on MBE Fundamentals.References.
Subject Index.