Oliver M.R. Chemical-Mechanical Planarization of Semiconductor Materials

Springer, 2004. — 432 p. — ISBN: 978-3-642-07738-8.This volume is a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, which is now a major part of state-of-the-art semiconductor technology. There are detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.Original Motivation for CMP.
CMP Technology and Its Technical Understanding.
Applications of CMP to Semiconductor Processing.
Polishing Tools and Consumables of CMP Technology.
Post CMP Cleaning.
Integration of CMP Into the Semiconductor Fabrication Process.
Pattern Dependency Issues.
Other Issues.CMP Technology.
Background and Motivation for CMP.
Description of the CMP Process.
Polishing Equipment.
Polish Process.
Planarization.
Polish Process Variables.
Scales and Random Polishing Effects.
Random Effects.
Slurries with Particles Other than Silica.
Non-ILD Non-Metal CMP.Metal Polishing Processes.
Metal Polishing Processes.
Evolution of Damascene Surface Morphology During Polishing.
Specifics of Tungsten and Copper Polishing.
Metal Polishing Chemistry.
Acid-Base Equilibria.
Buffering.
Oxidation-Reduction Reactions.
Half Reactions.
Electrode Potentials.
Complexation.
Surfactants and Inhibitors.
The Future of Metal Polishing.Metal CMP Science.Tungsten Experimental Data - Chemical and Electrochemical.
Tungsten Experimental Data - Role of Slurry Particle.
Conclusions on Mechanisms on W CMP.
Copper Experimental Data - Chemical and Electrochemical.
Copper Summary.
CMP Removal Models.
Tungsten Model of Paul.
Tungsten Model of Stein et al.
Copper Model of Babu et al.
Model Summary.
Future Trends.Equipment Used in CMP Processes.
CMP Tool Requirements.
Rotary CMP Tools.
Rotary Kinematics.
Carousel Systems.
Orbital Systems.
Linear Systems.
Modified Grinding Systems.
Web Format Tools.
Electrochemical Mechanical Planarization.
Carrier Technology.
Pad Conditioning.
Endpointing.CMP Polishing Pads.Polymer Requirements for Polishing Pads.
Basics of Polyurethanes.
Types of Commercially Available Polishing Pads and Their Manufacture.
Control of Polyurethane Pad Properties.
Control of Pad Properties Through Pad Geometry.
Relationships Between Pad Properties and Polishing Performance.
Slurryless Pad Technology.
Future Trends in Polishing Pads.
Acknowledgements.Fundamentals of CMP Slurry.
Introduction: Basic Components of CMP Slurries.
Surface Science and Electrochemistry in CMP Slurry.
Slurry as a Suspension.
Solids Content.
Slurry Handling.
Future Trends in Slurry.CMP Cleaning.Polishing and the Control of CMP Defects.
Mechanical Brush Scrubbing for CMP Cleaning.
Non-Contact Processes for CMP Cleaning.
Other Cleaning Technologies.
Cleaning of Oxides, W, STI, Cu, and low к Materials.
Future Directions for CMP Cleaning.Patterned Wafer Effects.Planarization Terminology and Characterization.
Pattern Dependencies in Dielectric CMP.
Metal CMP Pattern Dependencies.Integration Issues of CMP.
Oxide CMP Integration.
Tungsten CMP.
STI Integration.
Copper Damascene Integration.
Other Applications of CMP.Appendix: Pourbaix Diagrams.
References.