Park B.-E., Ishiwara H., Okuyama M., Sakai S., Yoon S.-M. (Eds.) Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications

Springer Science+Business Media, Dordrecht, 2016. — 350 p. — (Topics in Applied Physics. Volume 131) — ISBN: 9789402408393This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact.
Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.
This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.
The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.Features, Principles and Development of Ferroelectric–Gate Field-Effect Transistors
Okuyama, Masanori
Development of High-Endurance and Long-Retention FeFETs of Pt/Ca
Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
Tokumitsu, Eisuke
Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs
Non-volatile Ferroelectric Memory Transistors Using PVDF and P(VDF-TrFE) Thin Films
Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs
P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs
Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers
Non-volatile Paper Transistors with Poly(vinylidene fluoride-trifluoroethylene) Thin Film Using a Solution Processing Method
Novel Application of FeFETs to NAND Flash Memory Circuits
Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View
Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors