Capper P., Mauk M. (Eds.) Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials

John Wiley & Sons Ltd, England, 2007. — 466 p. — ISBN: 0470852909Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by supersaturation or cooling. At least 50% of growth in the optoelectronics area is currently focussed on LPE.Introduction to Liquid Phase Epitaxy
Liquid Phase Epitaxy in Russia Prior to 1990
Phase Diagrams and Modeling in Liquid Phase Epitaxy
Equipment and Instrumentation for Liquid Phase Epitaxy
Silicon, Germanium and Silicon-Germanium Liquid Phase Epitaxy
Liquid Phase Epitaxy of Silicon Carbide
Liquid Phase Epitaxy of Gallium Nitride
Liquid Phase Epitaxy of Quantum Wells and Quantum Dots
Liquid Phase Epitaxy of Hg 1–x Cd x Te (MCT)
Liquid Phase Epitaxy of Widegap II-VIs
Liquid Phase Epitaxy of Garnets
Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications
Liquid Phase Epitaxy for Light Emitting Diodes