Department of Defence (DoD), USA, 2012. – 1007 p.
Version F (3 Jan. 2012), superseeding previous version E of 20 November 2006.
This standard establishes uniform methods for testing semiconductor devices, including basic environmental tests to determine resistance to deleterious effects of natural elements and conditions surrounding military operations, and physical and electrical tests.
For the purpose of this standard, the term "devices" includes such items as transistors, diodes, voltage regulators, rectifiers, tunnel diodes, and other related parts. This standard is intended to apply only to semiconductor devices.
This entire test method standard has been revised.
This revision has been issued in six parts - the basic test method standard and five numbered parts:
MIL–STD–750 – Test Methods For Semiconductor Devices. (Basic standard).
MIL–STD–750–1 – Environmental Test Methods For Semiconductor Devices. (Test Methods 1000 through 1999). - 167 p.
MIL–STD–750–2 – Mechanical Test Methods For Semiconductor Devices. (Test Methods 2001 through 2999). - 292 p.
MIL–STD–750–3 – Electrical Characteristics Tests for Bipolar, MOSFET, and Gallium Arsenide Transistors. (Test Methods 3000 through 3999). - 345 p.
MIL–STD–750–4 – Electrical Characteristics Tests for Diodes, Microwave Diodes, Thyristors, and Tunnel Diodes. (Test Methods 4000 through 4999). - 165 p.
MIL–STD–750–5 – High Reliability Space Application Test Methods For Semiconductor Devices.
(Test Methods 5000 through 5999). - 19 p.